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PJD7NA65_R2_00001

Panjit International Inc.

Product No:

PJD7NA65_R2_00001

Package:

TO-252AA

Batch:

-

Datasheet:

-

Description:

650V N-CHANNEL MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 754 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.5Ohm @ 3.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) -
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Mfr Panjit International Inc.
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number PJD7N

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