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PJMB130N65EC_R2_00601

Panjit International Inc.

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Panjit International Inc.

Package:

TO-263

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Description:

650V/ 130MOHM / 29A/ EASY TO DRI

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User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1920 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	130mOhm @ 10.8A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	235W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Mfr	Panjit International Inc.
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PJMB130