Home / FET, MOSFET Arrays / PJQ4602_R1_00001

PJQ4602_R1_00001

Panjit International Inc.

Product No:

PJQ4602_R1_00001

Manufacturer:

Panjit International Inc.

Package:

DFN3030B-8

Batch:

Datasheet:

Description:

30V COMPLEMENTARY ENHANCEMENT MO

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for PJQ4602_R1_00001, please feel free to contact us. To facilitate the processing of your inquiry, kindly include PJQ4602_R1_00001 and the required quantity in your RFQ. IICSEMI provides the latest quote for PJQ4602_R1_00001 without requiring registration. Latest information on PJQ4602_R1_00001: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs PJQ4602_R1_00001 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel Complementary
Input Capacitance (Ciss) (Max) @ Vds	343pF @ 15V, 870pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	2.1V @ 250µA, 2.5V @ 250µA
Supplier Device Package	DFN3030B-8
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta), 17.8W (Tc)
Current - Continuous Drain (Id) @ 25°C	6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Mfr	Panjit International Inc.
Package	Tape & Reel (TR)
Base Product Number	PJQ4602