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PMT560ENEAX

NXP Semiconductors

Product No:

PMT560ENEAX

Manufacturer:

NXP Semiconductors

Package:

SOT-223

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Datasheet:

Description:

NEXPERIA PMT560ENEA - 100V N-CHA

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	112 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	4.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	715mOhm @ 1.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.7V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	750mW (Ta)
Series	-
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Mfr	NXP Semiconductors
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk