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PMXB75UPE/S500Z

NXP Semiconductors

Product No:

PMXB75UPE/S500Z

Manufacturer:

NXP Semiconductors

Package:

DFN1010D-3

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Description:

PMXB75UPE - P-channel Trench MOS

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	608 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	85mOhm @ 2.9A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	DFN1010D-3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	317mW (Ta), 8.33W (Tc)
Series	-
Package / Case	3-XDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Mfr	NXP Semiconductors
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Bulk