Home / Single FETs, MOSFETs / PMZB350UPE,315

PMZB350UPE,315

NXP USA Inc.

Product No:

PMZB350UPE,315

Manufacturer:

NXP USA Inc.

Package:

DFN1006B-3

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Datasheet:

Description:

NOW NEXPERIA PMZB350UPE - SMALL

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1.9 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	450mOhm @ 300mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	950mV @ 250µA
Supplier Device Package	DFN1006B-3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	360mW (Ta), 3.125W (Tc)
Series	-
Package / Case	3-XFDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Mfr	NXP USA Inc.
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk