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PSMN070-200B,118-NEX

Nexperia USA Inc.

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Nexperia USA Inc.

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D2PAK

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Description:

MOSFET N-CH 200V 35A D2PAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	70mOhm @ 17A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	250W (Ta)
Series	TrenchMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Package	Bulk