Home / Single FETs, MOSFETs / PSMN1R1-30YLEX

PSMN1R1-30YLEX

Nexperia USA Inc.

Product No:

PSMN1R1-30YLEX

Manufacturer:

Nexperia USA Inc.

Package:

LFPAK56, Power-SO8

Batch:

Datasheet:

Description:

PSMN1R1-30YLE/SOT669/LFPAK

Quantity:

Delivery:

Payment:

In Stock : 1500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.2135

$2.2135
10

$1.8354

$18.354
100

$1.46053

$146.053
500

$1.235817

$617.9085

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for PSMN1R1-30YLEX, please feel free to contact us. To facilitate the processing of your inquiry, kindly include PSMN1R1-30YLEX and the required quantity in your RFQ. IICSEMI provides the latest quote for PSMN1R1-30YLEX without requiring registration. Latest information on PSMN1R1-30YLEX: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs PSMN1R1-30YLEX latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6317 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.26mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 2mA
Supplier Device Package	LFPAK56, Power-SO8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	192W (Ta)
Series	-
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	265A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)
Base Product Number	PSMN1