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PSMN3R3-60PLQ

NXP USA Inc.

Product No:

PSMN3R3-60PLQ

Manufacturer:

NXP USA Inc.

Package:

TO-220AB

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Description:

NOW NEXPERIA PSMN3R3-60PLQ - 130

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10115 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.4mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	293W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	130A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk