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PSMN3R9-60XSQ

NXP USA Inc.

Product No:

PSMN3R9-60XSQ

Manufacturer:

NXP USA Inc.

Package:

TO-220F

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Datasheet:

Description:

MOSFET N-CH 60V 75A TO220F

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5494 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	103 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	55W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	PSMN3