Home / Single FETs, MOSFETs / PSMN4R8-100PSEQ

PSMN4R8-100PSEQ

Nexperia USA Inc.

Product No:

PSMN4R8-100PSEQ

Manufacturer:

Nexperia USA Inc.

Package:

TO-220AB

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 120A TO220AB

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.8735

$4.8735
10

$4.09545

$40.9545
100

$3.313125

$331.3125
500

$2.944981

$1472.4905
1000

$2.521632

$2521.632
2000

$2.374392

$4748.784

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for PSMN4R8-100PSEQ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include PSMN4R8-100PSEQ and the required quantity in your RFQ. IICSEMI provides the latest quote for PSMN4R8-100PSEQ without requiring registration. Latest information on PSMN4R8-100PSEQ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs PSMN4R8-100PSEQ latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	278 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	405W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tj)
Mfr	Nexperia USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	PSMN4R8