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PSMN5R3-25MLDX

NXP USA Inc.

Product No:

PSMN5R3-25MLDX

Manufacturer:

NXP USA Inc.

Package:

LFPAK33

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Description:

PSMN5R3-25MLD - N-CHANNEL 25V, L

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	858 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	12.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.9mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 1mA
Supplier Device Package	LFPAK33
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	51W (Tc)
Series	-
Package / Case	SOT-1210, 8-LFPAK33 (5-Lead)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk