Home / Single FETs, MOSFETs / PSMN7R8-120ESQ

PSMN7R8-120ESQ

NXP USA Inc.

Product No:

PSMN7R8-120ESQ

Manufacturer:

NXP USA Inc.

Package:

I2PAK

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

Quantity:

Delivery:

Payment:

In Stock : 430

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

278

$1.026

$285.228

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for PSMN7R8-120ESQ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include PSMN7R8-120ESQ and the required quantity in your RFQ. IICSEMI provides the latest quote for PSMN7R8-120ESQ without requiring registration. Latest information on PSMN7R8-120ESQ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs PSMN7R8-120ESQ latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9473 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	167 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7.9mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	349W (Tc)
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	PSMN7R8