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PSMN8R0-30YL,115

NXP USA Inc.

Product No:

PSMN8R0-30YL,115

Manufacturer:

NXP USA Inc.

Package:

LFPAK56, Power-SO8

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Datasheet:

Description:

MOSFET N-CH 30V 62A LFPAK56

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1005 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	18.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.3mOhm @ 15A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.15V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	56W (Tc)
Series	TrenchMOS™
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PSMN8