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PSMN9R5-100XS,127

NXP USA Inc.

Product No:

PSMN9R5-100XS,127

Manufacturer:

NXP USA Inc.

Package:

TO-220F

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Description:

MOSFET N-CH 100V 44.2A TO220F

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4454 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	81.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9.6mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	52.6W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	44.2A (Tc)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	PSMN9