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R6007JND3TL1

Rohm Semiconductor

Product No:

R6007JND3TL1

Manufacturer:

Rohm Semiconductor

Package:

TO-252

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Datasheet:

Description:

MOSFET N-CH 600V 7A TO252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	475 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 15 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	780mOhm @ 3.5A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	7V @ 1mA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	96W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tape & Reel (TR)
Base Product Number	R6007