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R6009END3TL1

Rohm Semiconductor

Product No:

R6009END3TL1

Manufacturer:

Rohm Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 9A TO252

Quantity:

Delivery:

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Payment:

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In Stock : 5016

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.2895

    $2.2895

  • 10

    $1.9019

    $19.019

  • 100

    $1.513635

    $151.3635

  • 500

    $1.28079

    $640.395

  • 1000

    $1.086734

    $1086.734

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 535mOhm @ 2.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 94W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number R6009

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