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R6530ENZ4C13

Rohm Semiconductor

Product No:

R6530ENZ4C13

Manufacturer:

Rohm Semiconductor

Package:

TO-247G

Batch:

-

Datasheet:

-

Description:

650V 30A TO-247, LOW-NOISE POWER

Quantity:

Delivery:

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Payment:

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In Stock : 486

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.2605

    $6.2605

  • 10

    $5.26015

    $52.6015

  • 100

    $4.25562

    $425.562

  • 500

    $3.782729

    $1891.3645

  • 1000

    $3.238968

    $3238.968

  • 2000

    $3.049832

    $6099.664

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 140mOhm @ 14.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 960µA
Supplier Device Package TO-247G
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 305W (Tc)
Series -
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number R6530

R6530ENZ4C13 Tags

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