Home / Single FETs, MOSFETs / R6576KNZ4C13

R6576KNZ4C13

Rohm Semiconductor

Product No:

R6576KNZ4C13

Manufacturer:

Rohm Semiconductor

Package:

TO-247G

Batch:

Datasheet:

Description:

650V 76A TO-247, HIGH-SPEED SWIT

Quantity:

Delivery:

Payment:

In Stock : 504

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$14.003

$14.003
10

$12.3329

$123.329
100

$10.6666

$1066.66
500

$9.666573

$4833.2865
1000

$8.866588

$8866.588

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for R6576KNZ4C13, please feel free to contact us. To facilitate the processing of your inquiry, kindly include R6576KNZ4C13 and the required quantity in your RFQ. IICSEMI provides the latest quote for R6576KNZ4C13 without requiring registration. Latest information on R6576KNZ4C13: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs R6576KNZ4C13 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	46mOhm @ 44.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 2.96mA
Supplier Device Package	TO-247G
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	735W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	76A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	R6576