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RCD100N20TL

Rohm Semiconductor

Product No:

RCD100N20TL

Manufacturer:

Rohm Semiconductor

Package:

CPT3

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Datasheet:

Description:

MOSFET N-CH 200V 10A CPT3

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	182mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5.25V @ 1mA
Supplier Device Package	CPT3
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	850mW (Ta), 20W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	RCD100