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RD3G500GNTL

Rohm Semiconductor

Product No:

RD3G500GNTL

Manufacturer:

Rohm Semiconductor

Package:

TO-252

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Datasheet:

Description:

MOSFET N-CH 40V 50A TO252

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	22800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	35W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RD3G500