Home / Single FETs, MOSFETs / RD3P01BATTL1

RD3P01BATTL1

Rohm Semiconductor

Product No:

RD3P01BATTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-252

Batch:

Datasheet:

Description:

PCH -100V -10A POWER MOSFET: RD3

Quantity:

Delivery:

Payment:

In Stock : 2448

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.121

$1.121
10

$0.9196

$9.196
100

$0.71535

$71.535
500

$0.606309

$303.1545
1000

$0.493905

$493.905

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RD3P01BATTL1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RD3P01BATTL1 and the required quantity in your RFQ. IICSEMI provides the latest quote for RD3P01BATTL1 without requiring registration. Latest information on RD3P01BATTL1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RD3P01BATTL1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	19.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	240mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	25W (Ta)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	RD3P01