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RDN100N20FU6

Rohm Semiconductor

Product No:

RDN100N20FU6

Manufacturer:

Rohm Semiconductor

Package:

TO-220FN

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Datasheet:

Description:

MOSFET N-CH 200V 10A TO220FN

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	543 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	360mOhm @ 5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220FN
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	35W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	RDN100