Home / Single FETs, MOSFETs / RF1S4N100SM9A

RF1S4N100SM9A

Harris Corporation

Product No:

RF1S4N100SM9A

Manufacturer:

Harris Corporation

Package:

TO-263AB

Batch:

Datasheet:

Description:

MOSFET N-CH 1000V 4.3A TO263AB

Quantity:

Delivery:

Payment:

In Stock : 187

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

89

$3.2205

$286.6245

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.5Ohm @ 2.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263AB
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	150W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Package	Bulk