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RF1S50N06SM9A

Fairchild Semiconductor

Product No:

RF1S50N06SM9A

Package:

TO-263AB

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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In Stock : 9898

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 317

    $0.9025

    $286.0925

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 20 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-263AB
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 131W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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