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RF1S640SM

Harris Corporation

Product No:

RF1S640SM

Manufacturer:

Harris Corporation

Package:

TO-263AB

Batch:

Datasheet:

Description:

MOSFET N-CH 200V 18A TO263AB

Quantity:

Delivery:

Payment:

In Stock : 665

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

110

$2.603

$286.33

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1275 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263AB
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Package	Bulk