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RF4E110BNTR

Rohm Semiconductor

Product No:

RF4E110BNTR

Manufacturer:

Rohm Semiconductor

Package:

HUML2020L8

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 11A HUML2020L8

Quantity:

Delivery:

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Payment:

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In Stock : 1066

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.627

    $0.627

  • 10

    $0.551

    $5.51

  • 100

    $0.42237

    $42.237

  • 500

    $0.333906

    $166.953

  • 1000

    $0.267121

    $267.121

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.1mOhm @ 11A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package HUML2020L8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta)
Series -
Package / Case 8-PowerUDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RF4E110

RF4E110BNTR Tags

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