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RFA100N05E

Harris Corporation

Product No:

RFA100N05E

Manufacturer:

Harris Corporation

Package:

TO-218-5

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1544

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

54

$5.377

$290.358

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-218-5
Drain to Source Voltage (Vdss)	50 V
Power Dissipation (Max)	240W (Tc)
Series	-
Package / Case	TO-218-5
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk