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RFD12N06RLESM9A

Fairchild Semiconductor

Product No:

RFD12N06RLESM9A

Manufacturer:

Fairchild Semiconductor

Package:

TO-252, (D-Pak)

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Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	63mOhm @ 18A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252, (D-Pak)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	49W (Tc)
Series	UltraFET™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk