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RFD16N05LSM9A

Fairchild Semiconductor

Product No:

RFD16N05LSM9A

Package:

TO-252, (D-Pak)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250mA
Supplier Device Package TO-252, (D-Pak)
Drain to Source Voltage (Vdss) 50 V
Power Dissipation (Max) 60W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Package Bulk

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