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RFD20N03SM

Harris Corporation

Product No:

RFD20N03SM

Manufacturer:

Harris Corporation

Package:

TO-252-3 (DPAK)

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 8441

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

701

$0.4085

$286.3585

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-252-3 (DPAK)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	90W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk