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RFD4N06L

Harris Corporation

Product No:

RFD4N06L

Manufacturer:

Harris Corporation

Package:

I-Pak

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1424

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

987

$0.285

$281.295

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	600mOhm @ 1A, 5V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	I-Pak
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	30W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Bulk