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RFP2N18

Harris Corporation

Product No:

RFP2N18

Manufacturer:

Harris Corporation

Package:

TO-220

Batch:

Datasheet:

Description:

N-CHANNEL, MOSFET

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.5Ohm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 2mA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	180 V
Power Dissipation (Max)	25W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk