Home / Single FETs, MOSFETs / RFP4N35

RFP4N35

Harris Corporation

Product No:

RFP4N35

Manufacturer:

Harris Corporation

Package:

TO-220-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RFP4N35, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RFP4N35 and the required quantity in your RFQ. IICSEMI provides the latest quote for RFP4N35 without requiring registration. Latest information on RFP4N35: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RFP4N35 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 25 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2Ohm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	350 V
Power Dissipation (Max)	75W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk