Home / Single FETs, MOSFETs / RH6R025BHTB1

RH6R025BHTB1

Rohm Semiconductor

Product No:

RH6R025BHTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

Datasheet:

Description:

NCH 150V 25A, HSMT8, POWER MOSFE

Quantity:

Delivery:

Payment:

In Stock : 2900

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.729

$1.729
10

$1.43355

$14.3355
100

$1.14133

$114.133
500

$0.965732

$482.866
1000

$0.819413

$819.413

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RH6R025BHTB1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RH6R025BHTB1 and the required quantity in your RFQ. IICSEMI provides the latest quote for RH6R025BHTB1 without requiring registration. Latest information on RH6R025BHTB1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RH6R025BHTB1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1010 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs	16.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	2W (Ta), 59W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	RH6R025