RJ1L12BGNTLL

Rohm Semiconductor

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RJ1L12BGNTLL

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Package:

TO-263AB

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Description:

NCH 60V 120A POWER MOSFET : RJ1L

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	175 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.9mOhm @ 40A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 500µA
Supplier Device Package	TO-263AB
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	192W (Ta)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RJ1L12