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RJ1P07CBHTL1

Rohm Semiconductor

Product No:

RJ1P07CBHTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-263AB

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Datasheet:

Description:

NCH 100V 120A, TO-263AB, POWER M

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4650 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.1mOhm @ 70A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-263AB
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	135W (Ta)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Ta), 70A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)