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RJ1P10BBHTL1

Rohm Semiconductor

Product No:

RJ1P10BBHTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-263AB

Batch:

-

Datasheet:

-

Description:

NCH 100V 170A, TO-263AB, POWER M

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3mOhm @ 90A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-263AB
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 189W (Ta)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 170A (Ta), 105A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)

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