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RJK03E1DNS-00#J5

Renesas Electronics America Inc

Product No:

RJK03E1DNS-00#J5

Manufacturer:

Renesas Electronics America Inc

Package:

8-HWSON (3.3x3.3)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 80000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

276

$1.0355

$285.798

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	10.7 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.9mOhm @ 12.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	8-HWSON (3.3x3.3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	15W (Tc)
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Mfr	Renesas Electronics America Inc
Package	Bulk