Home / Bipolar Transistor Arrays, Pre-Biased / RN1901FETE85LF

RN1901FETE85LF

Toshiba Semiconductor and Storage

Product No:

RN1901FETE85LF

Manufacturer:

Toshiba Semiconductor and Storage

Package:

ES6

Batch:

Datasheet:

Description:

TRANS 2NPN PREBIAS 0.1W ES6

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Product Information

Parameter Info

User Guide

Frequency - Transition	250MHz
Current - Collector (Ic) (Max)	100mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Resistor - Base (R1)	4.7kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50V
Supplier Device Package	ES6
Series	-
Transistor Type	2 NPN - Pre-Biased (Dual)
Package / Case	SOT-563, SOT-666
Power - Max	100mW
Resistor - Emitter Base (R2)	4.7kOhms
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Base Product Number	RN1901