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RQ3E100ATTB

Rohm Semiconductor

Product No:

RQ3E100ATTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 30V 10A/31A 8HSMT

Quantity:

Delivery:

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Payment:

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In Stock : 6468

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.798

    $0.798

  • 10

    $0.65265

    $6.5265

  • 100

    $0.507775

    $50.7775

  • 500

    $0.430388

    $215.194

  • 1000

    $0.350598

    $350.598

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for RQ3E100ATTB, please feel free to contact us. To facilitate the processing of your inquiry, kindly include RQ3E100ATTB and the required quantity in your RFQ. IICSEMI provides the latest quote for RQ3E100ATTB without requiring registration. Latest information on RQ3E100ATTB: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs RQ3E100ATTB latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.4mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSMT (3.2x3)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 31A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RQ3E100

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