Home / Single FETs, MOSFETs / RQ3E100MNTB1

RQ3E100MNTB1

Rohm Semiconductor

Product No:

RQ3E100MNTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 10A HSMT8

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of RQ3E100MNTB1, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include RQ3E100MNTB1 and the required quantity in the RFQ. GOOD can get the latest quotations of RQ3E100MNTB1 without registration. RQ3E100MNTB1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	9.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.3mOhm @ 10A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Ta)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RQ3E100