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RQ3E180AJTB1

Rohm Semiconductor

Product No:

RQ3E180AJTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

Datasheet:

Description:

NCH 30V 18A MIDDLE POWER MOSFET:

Quantity:

Delivery:

Payment:

In Stock : 2946

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.672

$1.672
10

$1.0602

$10.602
100

$0.784605

$78.4605
500

$0.720974

$360.487
1000

$0.59374

$593.74

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4290 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 18A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 11mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Ta), 30W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 30A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	RQ3E180