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RQ3E180BNTB1

Rohm Semiconductor

Product No:

RQ3E180BNTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

Datasheet:

Description:

NCH 30V 39A MIDDLE POWER MOSFET:

Quantity:

Delivery:

Payment:

In Stock : 2850

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.8905

$1.8905
10

$1.19415

$11.9415
100

$0.883975

$88.3975
500

$0.812307

$406.1535
1000

$0.668962

$668.962

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.9mOhm @ 18A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Ta), 20W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 39A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RQ3E180