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RQK0609CQDQS#H1

Renesas Electronics America Inc

Product No:

RQK0609CQDQS#H1

Manufacturer:

Renesas Electronics America Inc

Package:

UPAK

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Datasheet:

Description:

MOSFET N-CH 60V 4A UPAK

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 2A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.4V @ 1mA
Supplier Device Package	UPAK
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1.5W (Ta)
Series	-
Package / Case	TO-243AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Renesas Electronics America Inc
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)