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RS1P600BETB1

Rohm Semiconductor

Product No:

RS1P600BETB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSOP

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Description:

MOSFET N-CH 100V 17.5A/60A 8HSOP

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.7mOhm @ 17.5A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 500µA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3W (Ta), 35W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17.5A (Ta), 60A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	RS1P