RSD080N06TL

Rohm Semiconductor

Product No:

RSD080N06TL

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Package:

CPT3

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Description:

MOSFET N-CH 60V 8A CPT3

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	CPT3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	15W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RSD080