Home / Single FETs, MOSFETs / RV4E031RPHZGTCR1

RV4E031RPHZGTCR1

Rohm Semiconductor

Product No:

RV4E031RPHZGTCR1

Manufacturer:

Rohm Semiconductor

Package:

DFN1616-6W

Batch:

Datasheet:

Description:

MOSFET P-CH 30V 3.1A DFN1616-6W

Quantity:

Delivery:

Payment:

In Stock : 5852

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.76

$0.76
10

$0.65835

$6.5835
100

$0.455525

$45.5525
500

$0.380608

$190.304
1000

$0.323931

$323.931

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of RV4E031RPHZGTCR1, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include RV4E031RPHZGTCR1 and the required quantity in the RFQ. GOOD can get the latest quotations of RV4E031RPHZGTCR1 without registration. RV4E031RPHZGTCR1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 5 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	105mOhm @ 3.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	DFN1616-6W
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.5W (Ta)
Series	Automotive, AEC-Q101
Package / Case	6-PowerWFDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Package	Tape & Reel (TR)
Base Product Number	RV4E031