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RV4E031RPTCR1

Rohm Semiconductor

Product No:

RV4E031RPTCR1

Manufacturer:

Rohm Semiconductor

Package:

DFN1616-6W

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Datasheet:

Description:

MOSFET P-CH 30V 3.1A DFN1616-6

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 5 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	105mOhm @ 3.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	DFN1616-6W
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.5W
Series	Automotive, AEC-Q101
Package / Case	6-PowerWFDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RV4E031