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RW1E025RPT2CR

Rohm Semiconductor

Product No:

RW1E025RPT2CR

Manufacturer:

Rohm Semiconductor

Package:

6-WEMT

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Datasheet:

Description:

MOSFET P-CH 30V 2.5A 6WEMT

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	75mOhm @ 2.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	6-WEMT
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta)
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RW1E025